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3G InGaAs Pulse APD Diode Pins for OTDR

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Description

The APD/avalanche photo diode (3G InGaAs pulse APD diode pins for OTDR) is a p-n junction photodetector made of silicon or germanium.By applying a reverse bias voltage to the p-n junction,the incident light photons will strike the electrons in order to push them through a junction,thus achieving photoelectric current flows.When the applied reverse voltage increases,an avalanche current flow will occur.The avalanche effect of the current carrier is then used to amplify the photoelectric signal in the detection system in order to improve detector sensitivity.
This photo diode series features a small dark current, low operating voltage, and high sensitivity.It can operate in the pulse output mode or DC output mode, and is often used in OTDR systems and detection equipment for Raman backscattering systems.

Absolute Maximum Ratings 

Parameter Symbol Min. Typ. Max. Unit
Forward Current IF     10 mA
Reverse Current IR     0.5 mA
Operating Temp. TC -40   85 °C
Storage Temperature TSTG -40   85 °C
Lead Soldering Temp. TSOL -   260(10s) °c
Relative Humidity RH 0   85 % 

 

Optical & Electrical Characteristics  

Parameter Symbol Min. Typ. Max. Unit Notes
Reverse Breakdown Voltage VBR 40 45 55 V ID = 100 μA
Temperature Coefficient of Reverse Breakdown Voltage1 δ   0.2   %/°C  
Dark Current ID   5 25 nA VR = VBR*0.9
Multiplied Dark Current IDM   1 3 nA M = 2 to 10
Terminal Capacitance Ct   0.35   pF VR = VBR* 0.9, f = 1 MHz
Cut-off Frequency fC 2.5     GHz M = 10
Quantum Efficiency η 76 90   % λ = 1310 nm, M = 1
65 77   λ = 1550 nm, M = 1
Responsivity S 0.85 0.90   A/W λ = 1310 nm, M = 1
0.90 0.95   λ = 1550 nm, M = 1
Excess Noise Factor X   0.7   - λ = 1310 nm, IPO = 1.0 μw, M = 10, f = 35 MHz, B = 1 MHz
F   5   λ = 1550 nm, IPO = 1.0 μw, M = 10, f = 35 MHz, B = 1 MHz
Optical Return Loss ORL 30 40   dB SMF 
 
 
 
Important Notice

Performance figures, data and any illustrative material provided in this data sheet are typical and must be specifically confirmed in writing by F-tone Networks before they become applicable to any particular order or contract. In accordance with the F-tone Networks policy of continuous improvement specifications may change without notice.

The publication of information in this data sheet does not imply freedom from patent or other protective rights of F-tone Networks or others. Further details are available from any F-tone Networks sales representative.

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