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50 GHz 1310/1550nm ¸ßËÙ¹âµç̽²âÆ÷³§¼Ò

50 GHz 1310/1550nm ¸ßËÙ¹âµç̽²âÆ÷

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Description

The photodetector is designed to exhibit an optimized frequency response in both power and phase. It is ideally suited for OC-768/STM-256 long haul systems. The high power capability of up to 10 dBm allows for use of optical amplification at the detector input, and results in a high output voltage swing of up to 1V avoiding the need for electrical amplification. The photodetector is optimized for dual operations at 1310 nm and 1550 nm.

A waveguide integrated pin diode provides an excellent linearity, high responsivity and a superior flatness of the RF response. An integrated biasing guarantees a highly reliable component.

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  • High bandwidth with flat response
  • Excellent pulse behavior
  • Unsurpassed high-power handling capability
  • High responsivity
  • Support of 1300 and 1550 nm
  • Unique on-chip integrated bias network
  • Well matched to 50 Ohm
  • Hermetically sealed package
  • 50 GHz Bandwidth
  • Temperature: 0°C to +75°C
  • Supply voltage: 2.8 V
  • Transmission format: ODB

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  • DWDM
  • Communication systems at 40 Gb/s (OC-768) and beyond
  • Microwave photonics of up to 60 GHz
  • High-speed lightwave characterization

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      ÀàÐÍ£º                 ¹âµç̽²âÆ÷
      Data Rate:           40 Gbps
      ²¨³¤£º                1310nm ²¨¶Î  1550nm
Important Notice

Performance figures, data and any illustrative material provided in this data sheet are typical and must be specifically confirmed in writing by F-tone Networks before they become applicable to any particular order or contract. In accordance with the F-tone Networks policy of continuous improvement specifications may change without notice.

The publication of information in this data sheet does not imply freedom from patent or other protective rights of F-tone Networks or others. Further details are available from any F-tone Networks sales representative.

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